MOS管饱和导通后，随着Vds增加，Id不变，那么是Rds变大了吗？若不变，Vds增大的电压去哪里了? - 知乎
10 September 2025 admin
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好问题。 不过MOS器件原理与建模的书里其实都有答案。 1) 对长沟器件来说，进入饱和区后（Vds>Vsat），Ids不随Vds增加而增加，实践中Lg达到几个um时候就很明显看到这个现象，此时Rds趋于无穷大，所以MOS的饱和区可以用于放大器，也可以用于电流源。
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